

SS8050 NPN General Purpose Transistor TO-92 Package
Original price was: ₹10.00.₹5.90Current price is: ₹5.90.
- NPN epitaxial silicon transistor
- Collector-base voltage (VCBO): 40 V
- Collector-emitter voltage (VCEO): 25 V
- Emitter-base voltage (VEBO): 6 V
- Continuous collector current (IC): 1.5 A
- Power dissipation (PD): 1 W @ Ta = 25 °C
- DC current gain (hFE): 45–300 (classification dependent)
- Transition frequency (fT): 100 MHz
- TO-92-3 package (case 135AN / 135AR)
The SS8050 is an NPN epitaxial silicon transistor specified for output amplifier applications in portable radios operating in Class-B push-pull configurations. The datasheet identifies it as complementary to the SS8550.
The device is rated for a collector-emitter voltage of 25 V and supports a continuous collector current of 1.5 A. Power dissipation is specified as 1 W at an ambient temperature of 25 °C, with thermal derating defined above this temperature.
Electrical characteristics list DC current gain values dependent on classification and operating current, and a current gain bandwidth product of 100 MHz under the stated test conditions. The SS8050 is supplied in a TO-92-3 package, with standard lead configurations as shown in the datasheet.





