The IRF640N is an N-channel power MOSFET designed for high-voltage switching applications, commonly used in power supplies, inverters, and amplifier circuits.
Configuration:
N-channel enhancement mode MOSFET
Silicon construction
Electrical Characteristics:
Drain-source voltage (VDS): 200 V
Continuous drain current (ID): 18 A (at 25 °C)
On-state resistance (RDS(on)): 0.15 Ω (at VGS = 10 V)
Power dissipation: 150 W
Fast switching performance
Fully avalanche rated
Package:
TO-220 through-hole package
Construction:
Designed for PCB mounting with heatsink support
Provides reliable thermal performance for high-power operation
Configuration Notes:
Suitable for high-voltage, moderate-current switching applications
Low RDS(on) improves efficiency in power circuits
Requires proper gate drive voltage for optimal switching
Heatsinking required for high power operation
Intended Use:
Power supply circuits
Inverter and power control applications
Audio amplifier circuits
General-purpose high-voltage switching applications
