The 2SB649 is a silicon PNP power transistor designed for power amplifier applications, offering high collector current capability and suitable operation in high-voltage circuits.
Configuration:
PNP bipolar junction transistor
Silicon construction
Electrical Characteristics:
Collector-emitter breakdown voltage V(BR)CEO: −120 V (min)
Collector-base voltage (VCBO): −160 V
Continuous collector current (IC): −1.5 A
Pulsed collector current (ICP): −3 A
Power dissipation: 20 W (at Tc = 25 °C), 1 W (at Ta = 25 °C)
DC current gain (hFE): 60 to 320
Transition frequency (fT): 140 MHz
Package:
TO-126 through-hole package
Construction:
Designed for PCB mounting
Requires proper heat dissipation for reliable operation under load
Configuration Notes:
Suitable for high-voltage, moderate-current amplification
Complementary pairing with NPN devices in amplifier stages
Thermal management is important for sustained performance
Intended Use:
Audio power amplifier stages
Driver and output stages in amplifier circuits
General-purpose power amplification applications
