The 2SA1381 is a PNP epitaxial silicon transistor designed for high-voltage, low-current applications, commonly used in audio, video, and general-purpose amplifier circuits.
Configuration:
PNP bipolar junction transistor
Epitaxial silicon construction
Electrical Characteristics:
Collector-emitter voltage (BVCEO): -300 V
Collector-base voltage (BVCBO): -300 V
Continuous collector current (IC): -100 mA
Pulsed collector current (ICP): -200 mA
Power dissipation: 7 W (at Tc = 25 °C), 1.2 W (at Tc = 125 °C)
Transition frequency (fT): 150 MHz
Package:
TO-126 through-hole package
Construction:
Designed for PCB mounting with thermal considerations
Suitable for high-voltage circuit applications
Configuration Notes:
High voltage capability with low current operation
Suitable for voltage amplification and current source circuits
Requires proper biasing and thermal management for stable operation
Intended Use:
Audio amplifier voltage stages
Current source circuits
CRT display and video output stages
General-purpose high-voltage amplification applications
