₹60.00Original price was: ₹60.00.₹35.00Current price is: ₹35.00.
• Device Type: P-channel MOSFET
• Model: IRF9Z34
• Voltage Rating: -60 V
• Current Rating: -18 A
• Pulsed Current: -72 A
• RDS(on): ~0.14 Ω
• Gate Voltage: ±20 V
• Package: TO-220AB
• Feature: Fast switching, avalanche rated
• Application: Power electronics, switching, motor control
IRF9Z34 P-channel MOSFET designed for switching and amplification applications in power electronics. This device supports up to -60 V drain-source voltage and continuous drain current up to -18 A, making it suitable for medium to high power circuits. It features low RDS(on) and fast switching characteristics, ensuring efficient operation with reduced power loss. Built using HEXFET technology, it offers rugged performance and reliability.
Configuration:
P-channel MOSFET
Through-hole package (TO-220AB)
Suitable for switching and amplification
Electrical Characteristics:
Drain-source voltage: -60 V
Continuous drain current: -18 A
Pulsed drain current: up to -72 A
Low RDS(on): ~0.14 Ω
Gate-source voltage: ±20 V
Power dissipation: up to ~60 W (with proper heat sinking)
Package:
TO-220AB through-hole package
Construction:
HEXFET process technology
Fast switching capability
Avalanche rated device
Configuration Notes:
Suitable for high efficiency switching applications
Requires proper heat sinking for high power operation
Intended Use:
Power switching circuits
SMPS and DC-DC converters
Motor control
Audio amplifier power stages
General-purpose power electronics
