The IRF9540N is a P-channel power MOSFET designed for high-voltage switching applications, commonly used in power control circuits and inverter designs.
Configuration:
P-channel enhancement mode MOSFET
Silicon construction
Electrical Characteristics:
Drain-source voltage (VDS): -100 V
Continuous drain current (ID): -23 A (at 25 °C)
On-state resistance (RDS(on)): 0.117 Ω (at VGS = -10 V)
Power dissipation: 140 W
Fast switching performance
Fully avalanche rated
Package:
TO-220 through-hole package
Construction:
Designed for PCB mounting with heatsink support
Provides reliable thermal performance for high-power operation
Configuration Notes:
Lower RDS(on) improves efficiency compared to higher resistance MOSFETs
Suitable for high-current, high-voltage switching applications
Requires proper gate drive for optimal performance
Heatsinking required for high power operation
Intended Use:
Power supply circuits
Inverter and power control applications
Audio amplifier circuits
High-current switching applications
