₹40.00Original price was: ₹40.00.₹24.90Current price is: ₹24.90.
• Device Type: N-channel MOSFET
• Model: IRF540N
• Voltage Rating: 100 V
• Current Rating: 33 A
• RDS(on): ~44 mΩ
• Gate Voltage: ±20 V
• Power Dissipation: Up to 130 W
• Package: TO-220 (through-hole)
• Feature: Fast switching, avalanche rated
• Application: Power electronics, switching, motor control
IRF540N N-channel MOSFET designed for switching and amplification applications in power electronics. This device supports up to 100 V drain-source voltage and continuous drain current up to 33 A, making it suitable for medium to high power circuits. It features low RDS(on) and fast switching characteristics, ensuring efficient performance with reduced losses. Built using advanced HEXFET technology, it offers rugged operation and reliability across a wide range of applications.
Configuration:
N-channel MOSFET
Through-hole package (TO-220)
Suitable for switching and amplification
Electrical Characteristics:
Drain-source voltage: 100 V
Continuous drain current: 33 A
Low RDS(on): ~44 mΩ
Gate-source voltage: ±20 V
Power dissipation: up to 130 W (with proper heat sinking)
Package:
TO-220 through-hole package
Construction:
Advanced HEXFET process technology
Fast switching and low on-resistance
Fully avalanche rated device
Configuration Notes:
Suitable for high efficiency switching applications
Requires proper heat sinking for high power operation
Intended Use:
Power switching circuits
SMPS and DC-DC converters
Motor drivers
Audio amplifier power stages
Industrial and DIY applications
