The 2SD669 is an NPN silicon power transistor designed for low-frequency power amplifier applications, commonly used as a complementary pair with the 2SB649 in amplifier circuits.
Configuration:
NPN bipolar junction transistor
Silicon construction
Electrical Characteristics:
Collector-emitter breakdown voltage V(BR)CEO: 120 V
Collector-base breakdown voltage (VCBO): 180 V
Continuous collector current (IC): 1.5 A
Power dissipation: 1 W (at Ta = 25 °C)
DC current gain (hFE): 60 to 320 (classification dependent)
Transition frequency (fT): 140 MHz
Package:
TO-126 through-hole package
Construction:
Designed for PCB mounting
Requires appropriate thermal conditions for stable operation
Configuration Notes:
Suitable for low-frequency power amplification
Often used as a complementary pair with PNP transistor 2SB649
Gain classification impacts amplifier performance
Intended Use:
Audio amplifier circuits
Driver and output stages in power amplifiers
General-purpose low-frequency power amplification
