The 2SC3503 is an NPN epitaxial silicon transistor designed for high-voltage, low-current amplification applications, commonly used in audio and signal processing circuits.
Configuration:
NPN bipolar junction transistor
Epitaxial construction
Electrical Characteristics:
Collector-emitter voltage (BVCEO): 300 V
Collector-base voltage (BVCBO): 300 V
Continuous collector current (IC): 100 mA
Pulsed collector current (ICP): up to 200 mA
Power dissipation: 7 W (at Tc = 25 °C), 1.2 W (at Tc = 125 °C)
DC current gain (hFE): 40 to 320 (depends on classification and operating conditions)
Transition frequency (fT): approximately 150 MHz
Package:
TO-126 through-hole package
Construction:
Suitable for PCB mounting with appropriate thermal management
Configuration Notes:
Designed for high-voltage, low-current amplification
Requires proper biasing and heat dissipation for reliable operation
