2SC3503 NPN Power Transistor TO-126 Package High Voltage Low Noise

2SC3503 NPN Epitaxial Silicon Transistor (TO-126)

The 2SC3503 is an NPN epitaxial silicon transistor designed for high-voltage, low-current amplification applications, commonly used in audio and signal processing circuits.

Configuration:

• NPN bipolar junction transistor
• Epitaxial construction

Electrical Characteristics:

• Collector-emitter voltage (BVCEO): 300 V
• Collector-base voltage (BVCBO): 300 V
• Continuous collector current (IC): 100 mA
• Pulsed collector current (ICP): up to 200 mA
• Power dissipation: 7 W (at Tc = 25 °C), 1.2 W (at Tc = 125 °C)
• DC current gain (hFE): 40 to 320 (depends on classification and operating conditions)
• Transition frequency (fT): approximately 150 MHz

Package:

• TO-126 through-hole package

Construction:

• Suitable for PCB mounting with appropriate thermal management

Configuration Notes:

• Designed for high-voltage, low-current amplification
• Requires proper biasing and heat dissipation for reliable operation

Intended Use:

• Audio amplifier voltage stages
• Current source circuits
• Video and signal amplification
• General-purpose high-voltage amplifier applications