The 2SC2690A is an NPN silicon power transistor designed for high-voltage, moderate-current applications, commonly used in audio amplifier driver stages and RF-related circuits.
Configuration:
NPN bipolar junction transistor
Silicon construction
Electrical Characteristics:
Collector-emitter voltage (VCEO): 160 V
Collector-base voltage (VCBO): 160 V
Continuous collector current (IC): 1.2 A
Pulsed collector current (IC pulse): up to 2.5 A
Power dissipation: 20 W (at Tc = 25 °C), 1.2 W (at Ta = 25 °C)
DC current gain (hFE): 60 to 320 (rank dependent)
Transition frequency (fT): 175 MHz
Package:
TO-126 through-hole package
Construction:
Designed for PCB mounting
Requires adequate heat dissipation for sustained operation at higher power levels
Configuration Notes:
Suitable for high-voltage, moderate-current amplification
Gain classification affects performance in amplifier circuits
Thermal management is critical under high load conditions
Intended Use:
Audio amplifier driver stages (typically 50 W to 100 W systems)
RF and signal amplification circuits
TV vertical deflection output stages
General-purpose high-voltage amplifier applications
