TIP122 NPN Darlington Power Transistor 100V 5A TO-220 Package

TIP122 NPN Darlington power transistor designed for high current switching and amplification applications. This device uses a monolithic Darlington configuration, providing very high current gain and ease of driving with low base current. It is suitable for power control, motor driving, and amplifier circuits.

Configuration:
NPN Darlington transistor
Through-hole package (TO-220)
High gain Darlington pair configuration

Electrical Characteristics:
Collector-emitter voltage (VCEO): 100 V
Collector-base voltage (VCBO): 100 V
Emitter-base voltage (VEBO): 5 V
Continuous collector current (IC): 5 A
Peak collector current (ICM): 8 A
Base current (IB): 0.1 A max
Power dissipation: 65 W (at Tc = 25°C)
DC current gain (hFE): ~1000
Collector-emitter saturation voltage: ~2 V to 4 V
Base-emitter voltage: ~2.5 V

Package:
TO-220 through-hole package

Construction:
Silicon epitaxial Darlington transistor
Integrated resistor network (R1 ≈ 5 kΩ, R2 ≈ 150 Ω)
High gain and high current capability

Configuration Notes:
Requires heat sink for high power operation
High gain allows direct drive from logic circuits
Higher saturation voltage compared to single BJT

Intended Use:
Power switching applications
Motor drivers and relays
Audio amplifier stages
Lamp and load drivers
General-purpose high current control circuits