MJE13003 NPN Power Transistor TO-126 Package

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MJE13003 NPN Power Transistor TO-126 Package

Original price was: ₹20.00.Current price is: ₹9.90.

NPN silicon power transistor
Collector-emitter sustaining voltage VCEO(sus): 400 V
Collector-emitter voltage VCEV: 700 V
Continuous collector current (IC): 1.5 A
Peak collector current (ICM): 3 A
Total power dissipation: 40 W @ Tc = 25 °C, 1.4 W @ Ta = 25 °C
Transition frequency (fT): 4–10 MHz
TO-126 package

SKU: MJE13003_TR Categories: components, Transistors

MJE13003 NPN Silicon Power Transistor (TO-126)

The MJE13003 is an NPN silicon power transistor from the SWITCHMODE™ series, designed for high-voltage and high-speed switching applications.

Configuration:

NPN bipolar junction transistor
Optimized for switching applications in inductive circuits

Electrical Characteristics:

Collector-emitter sustaining voltage VCEO(sus): 400 V
Collector-emitter voltage VCEV: 700 V
Continuous collector current (IC): 1.5 A
Peak collector current (ICM): 3 A
Total power dissipation: 40 W (at Tc = 25 °C), 1.4 W (at Ta = 25 °C)
Transition frequency (fT): approximately 4 MHz to 10 MHz

Package:

TO-126 through-hole package

Construction:

Suitable for PCB mounting with appropriate thermal management

Configuration Notes:

Designed for high-speed switching in power circuits
Requires proper biasing and heat dissipation for reliable operation

Intended Use:

Switching regulators and SMPS circuits
Inverters and motor control circuits
Relay and solenoid drivers
High-voltage switching applications
General-purpose power switching circuits