MJE13003 NPN Power Transistor TO-126 Package

MJE13003 NPN Silicon Power Transistor (TO-126)

The MJE13003 is an NPN silicon power transistor from the SWITCHMODE™ series, designed for high-voltage and high-speed switching applications.

Configuration:

• NPN bipolar junction transistor
• Optimized for switching applications in inductive circuits

Electrical Characteristics:

• Collector-emitter sustaining voltage VCEO(sus): 400 V
• Collector-emitter voltage VCEV: 700 V
• Continuous collector current (IC): 1.5 A
• Peak collector current (ICM): 3 A
• Total power dissipation: 40 W (at Tc = 25 °C), 1.4 W (at Ta = 25 °C)
• Transition frequency (fT): approximately 4 MHz to 10 MHz

Package:

• TO-126 through-hole package

Construction:

• Suitable for PCB mounting with appropriate thermal management

Configuration Notes:

• Designed for high-speed switching in power circuits
• Requires proper biasing and heat dissipation for reliable operation

Intended Use:

• Switching regulators and SMPS circuits
• Inverters and motor control circuits
• Relay and solenoid drivers
• High-voltage switching applications
• General-purpose power switching circuits