The MJE13001 is an NPN silicon transistor designed for high-voltage, low-current switching applications, commonly used in SMPS circuits, LED drivers, and compact power supply designs.
Configuration:
NPN bipolar junction transistor
Silicon construction
Electrical Characteristics:
Collector-emitter voltage (VCEO): 400 V
Collector-base voltage (VCBO): 600 V
Continuous collector current (IC): 0.2 A
Power dissipation: 1 W
DC current gain (hFE): 10 to 40
Transition frequency (fT): approximately 8 MHz
Package:
TO-92 through-hole package
Construction:
Designed for PCB mounting in compact circuits
Suitable for high-voltage applications with limited current requirements
Configuration Notes:
Optimized for high-voltage switching applications
Low current handling compared to power transistors
Wide operating temperature range from −55 °C to +150 °C
Intended Use:
SMPS circuits
LED driver circuits
Compact power supply designs
General-purpose high-voltage switching applications
