₹100.00Original price was: ₹100.00.₹59.90Current price is: ₹59.90.
• Device Type: N-channel MOSFET
• Model: IRFP250N
• Voltage Rating: 200 V
• Current Rating: 30 A
• Pulsed Current: 120 A
• RDS(on): ~0.075 Ω
• Gate Voltage: ±20 V
• Power Dissipation: 214 W
• Package: TO-247AC
• Feature: Fast switching, avalanche rated
• Application: Power electronics, motor control, SMPS
IRFP250N N-channel MOSFET designed for high-power switching and amplification applications in power electronics. This device supports up to 200 V drain-source voltage and continuous drain current up to 30 A, making it suitable for demanding power circuits. It features low RDS(on), fast switching performance, and high power dissipation capability. Built using advanced HEXFET technology, it ensures efficient and reliable operation in industrial and high-power applications.
Configuration:
N-channel MOSFET
Through-hole package (TO-247AC)
Suitable for switching and amplification
Electrical Characteristics:
Drain-source voltage: 200 V
Continuous drain current: 30 A (at 25°C)
Pulsed drain current: up to 120 A
Low RDS(on): ~0.075 Ω
Gate-source voltage: ±20 V
Power dissipation: up to 214 W
Package:
TO-247AC through-hole package
Construction:
Advanced HEXFET process technology
Fast switching characteristics
Fully avalanche rated device
Configuration Notes:
Suitable for high power and high voltage applications
Requires proper heat sinking for full performance
Intended Use:
SMPS and DC-DC converters
Motor drives and inverters
High-power audio amplifiers
Industrial power control systems
DIY and professional power electronics
