The IRFP240 is an N-channel power MOSFET designed for high-voltage and high-current switching applications, commonly used in power supplies, amplifiers, and inverter circuits.
Configuration:
N-channel enhancement mode MOSFET
Silicon construction
Electrical Characteristics:
Drain-source voltage (VDS): 200 V
Continuous drain current (ID): 20 A (at 25 °C)
On-state resistance (RDS(on)): 0.18 Ω (at VGS = 10 V)
Power dissipation: 150 W
Fast switching performance
Repetitive avalanche rated
Package:
TO-247AC through-hole package
Construction:
Designed for PCB mounting with heatsink support
Provides efficient thermal performance for high-power operation
Configuration Notes:
Low RDS(on) reduces conduction losses
Suitable for high-voltage, moderate-current switching applications
Includes intrinsic body diode for switching circuits
Requires proper gate drive for optimal performance
Heatsinking required for high power operation
Intended Use:
Audio amplifier circuits
Power supply applications
Inverter and power control circuits
General-purpose high-voltage switching applications
