The MPSA42 is an NPN silicon transistor designed for high-voltage applications, commonly used in amplification and switching circuits requiring high voltage capability.
Configuration:
NPN bipolar junction transistor
Silicon construction
Electrical Characteristics:
Collector-emitter voltage (VCEO): 300 V
Collector-base voltage (VCBO): 300 V
Emitter-base voltage (VEBO): 6 V
Continuous collector current (IC): 500 mA
Power dissipation: 625 mW (at Ta = 25 °C)
Transition frequency (fT): 50 MHz
Package:
TO-92 (TO-226AA) through-hole package
Construction:
Designed for PCB mounting with straight or bent lead configurations
Suitable for compact, high-voltage circuit designs
Configuration Notes:
High voltage capability suitable for specialized applications
Moderate current handling with small-signal characteristics
Power dissipation increases with proper thermal reference conditions
Intended Use:
High-voltage amplification circuits
Signal switching applications
Power supply control circuits
General-purpose high-voltage transistor applications
