The 2SD718 is a silicon NPN power transistor designed for audio frequency power amplifier applications, commonly used in output stages of medium-power amplifier systems.
Configuration:
NPN bipolar junction transistor
Silicon construction
Electrical Characteristics:
Collector-emitter breakdown voltage V(BR)CEO: 120 V (min)
Collector-base voltage (VCBO): 120 V
Continuous collector current (IC): 8 A
Power dissipation: 80 W (at Tc = 25 °C)
DC current gain (hFE): 55 to 160
Transition frequency (fT): 12 MHz
Package:
TO-3P through-hole package
Construction:
Designed for PCB mounting with heatsink support
Requires proper thermal management for high-power operation
Configuration Notes:
Suitable for high-current, medium-frequency amplification
Optimized for audio frequency output stages
Requires adequate heatsinking for reliable performance
Intended Use:
Audio power amplifier output stages (typically 45 W to 50 W systems)
High-current switching and amplification circuits
General-purpose power amplification applications
