The 10N60 is an N-channel enhancement-mode power MOSFET designed for high-voltage switching and energy conversion applications, commonly used in SMPS, adapters, and charger circuits.
Configuration:
N-channel enhancement mode MOSFET
Silicon construction (planar VDMOS technology)
Electrical Characteristics:
Drain-source voltage (VDS): 600 V
Continuous drain current (ID): 10 A (at Tc = 25 °C)
On-state resistance (RDS(on)): approximately 0.68 Ω (at VGS = 10 V)
Designed for high-voltage switching applications
Package:
TO-220 through-hole package
Construction:
Designed for PCB mounting with heatsink support
Provides efficient thermal performance for high-voltage operation
Configuration Notes:
Low RDS(on) helps reduce conduction losses
Optimized for high-frequency switching applications
Requires proper gate drive voltage for efficient operation
Heatsinking required for high power operation
Intended Use:
SMPS (switch mode power supplies)
AC-DC adapters and chargers
Power switching circuits
Energy conversion applications
